Standard service

Photolithography

Pattern resist for etching, lift-off or permanent polymer structures. Choose the exposure route around the feature size, alignment and sample geometry.

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Resist Options

Resist coating and vapor priming for etching, lift-off and permanent polymer structures.

Wafer size
Up to 4"
Smallest piece
5 × 5 mm
Coating
Spin
Vapor priming
75 – 120 °C
  • Positive
  • Reversal
  • Epoxy
  • Negative
  • PMGI
  • Cured epoxy: difficult stripping
  • Positive resist softening: 100–130 °C
  • Coating nonuniformity near steps, trenches and edges

Materials and thickness

MaterialThickness per runUse and notes
Positive photoresist0.5–20 µmOptical etch mask Formulation determines thickness and resolution.
Image-reversal photoresist0.7–3.5 µmUndercut mask Resist grade determines thickness and undercut.
Negative epoxy photoresist0.5–200 µmThick or permanent structures Thick films require suitable exposure and development conditions.
PMGI underlayer0.1–5 µmBilayer lift-off Underlayer thickness must exceed metal thickness.
Full specifications
Substrates
Flat Si, glass, sapphire and compatible film stacks; irregular pieces and steps limit coating uniformity.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Thickness range
Positive: 0.5–20 µm; reversal: 0.7–3.5 µm; epoxy: 0.5–200 µm; PMGI: 0.1–5 µm.
Process temperature
Priming: 75–120 °C; epoxy bake: about 95 °C; PMGI: 160–190 °C or higher.
Materials
Positive, image-reversal, negative epoxy and strippable negative resists; PMGI lift-off underlayers.
Conformality
Spin coating thins over steps and varies near trenches and sample edges.
  • Resist formulation determines coating thickness and achievable feature size.
  • Cured epoxy resist is difficult to strip; use it where permanent polymer structures are acceptable.
  • Adhesion promoters must suit the resist and substrate; epoxy and PMGI often need no primer.
  • Positive resist profiles can soften at 100–130 °C; subsequent processing must stay within the mask thermal budget.
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Mask Aligner

Contact and proximity exposure of repeated optical patterns from a reusable photomask.

Wafer size
Up to 4"
Alignment accuracy
< 1 µm
Mask size
4" or 5"
Exposure temp.
Room temperature
  • Contact
  • Proximity
  • Front-side
  • Back-side
  • Back-side alignment: accessible marks and coordinate map
  • Resolution limits: proximity gaps and thick resist
  • Contact limits: raised features and debris
Full specifications
Substrates
Flat resist-coated wafers and pieces.
Sample size
Pieces to 100 mm wafers.
Mask size
4" or 5" square photomasks.
Minimum feature
About 2 µm in contact exposure.
Alignment
Better than 1 µm front-side with suitable marks; back-side alignment needs accessible marks.
Process temperature
Exposure near room temperature; baking depends on resist.
Resolution
Proximity gaps, particles and thick resist reduce resolution.
  • Back-side alignment requires visible, accessible marks and a defined front-to-back coordinate map.
  • Raised features and debris prevent uniform mask contact; proximity exposure requires coarser features.
  • Minimum feature size depends on mask quality, resist thickness and sample flatness.
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Maskless Aligner

Non-contact optical patterning directly from a digital layout, for rapid design changes and small fabrication runs.

Write area
150 × 150 mm
Min line size
0.6 µm
Overlay accuracy
0.25 µm
Max write speed
285 mm²/min
  • Non-contact
  • Optical focus
  • High aspect ratio
  • Grayscale
  • Automatic sample-edge detection
  • Resolution and speed depend on resist, dose and pattern
Full specifications
Exposure
Non-contact direct writing at 365 or 375 nm.
Write area
Up to 150 × 150 mm; usable area depends on the sample and mounting.
Minimum line
Down to 0.6 µm with a suitable resist and pattern geometry.
Overlay accuracy
0.25 µm with suitable alignment marks.
Write speed
Up to 285 mm²/min; exposure dose and pattern affect throughput.
Exposure options
Optical focus, high-aspect-ratio mode and simple grayscale patterning.
Layout handling
Automatic sample-edge detection and multiple layout-file formats.
  • Linewidth, spacing and overlay are separate requirements; achievable values depend on resist, dose and sample geometry.
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E-Beam Lithography

Direct electron-beam patterning for nanoelectronics, photonics and quantum devices.

Beam energy
100 kV
Min feature size
< 8 nm
Overlay accuracy
< 5 nm
Max beam current
350 nA
  • PMMA
  • MMA / PMMA bilayer
  • HSQ
  • Proximity-effect correction
  • Automatic beam and alignment calibration
  • Final dimensions depend on resist and pattern transfer
Full specifications
Beam energy
100 kV primary operation; 50 kV calibration available.
Minimum feature
Below 8 nm with suitable resist and pattern geometry.
Overlay accuracy
Below 5 nm with suitable alignment marks.
Beam current
Up to 350 nA; current is selected for resolution and write time.
Samples
Wafers, photomasks and small pieces; sample dimensions are checked against the available holders.
Pattern preparation
Proximity-effect correction with automatic beam and alignment calibration.
  • Insulating samples require charge control; the resist and mounting are selected for the substrate.
  • Minimum feature size and overlay depend on the layout and resist process; etching or lift-off sets the final device dimensions.

Request a Quote

Tell us what you’re building.

Tell us what you want to make and what it needs to do. Send the substrate, film stack, layout, quantity, and requested timing for a quote.

  • Substrates and sizes
  • Film stack and feature sizes
  • Quantity and timeline