Glance Foundry
Back to the cleanroom

Standard service

Dicing & Packaging

Separate wafers into dies and prepare them for handling, shipment or electrical connection. Supply the die map, edge keep-outs, pad layout and package requirements.

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  1. 01Blade Dicing
  2. 02Die Handling and Shipping
  3. 03Wire Bonding
  4. 04Die Attach
01 / 04

Blade Dicing

Wafer and piece separation along a supplied street map.

Wafer size
Up to 4"
Si/glass blade
40 – 100 µm
Cut loss
≈80 – 120 µm
Routine die
≥ 2 × 2 mm
  • Si
  • Sapphire
  • Glass
  • Quartz
  • Dicing tape
  • Clear streets for kerf, chipping and alignment
  • Water, debris and loading: sensitive-structure damage risk
  • Tape retention limits: backside films and small dies
Full specifications
Substrates
Si, sapphire, glass and quartz.
Sample size
Pieces to 100 mm wafers; 150 mm requires compatible mounting and blade clearance.
Kerf
Si/glass blades: 40–100 µm; effective material loss including chipping: about 80–120 µm.
Minimum die size
Routine dies: at least 2 × 2 mm; smaller dies require secure mounting and pickup.
Mounting
Dicing tape on a frame; tape adhesion and release must suit die size and backside films.
Process temperature
Near-ambient, water-cooled cutting; protective-coating bakes are separate.
  • Kerf, chipping and alignment allowances require clear streets; cuts extend across the sample.
  • Glass, quartz and sapphire chip differently from silicon; allow material-specific edge clearance.
  • Water, debris and mechanical loading can damage sensitive structures; specify protective coatings and cleaning needs.
  • Backside metals, adhesives and very small dies limit tape retention and clean release.
02 / 04

Die Handling and Shipping

Mapped dies on tape frames or in protective carriers for handling and shipment.

Min die
2 × 2 mm
Max die
25 × 25 mm
Carriers
3 options
Handling temp.
Room temperature
  • Tape frame
  • Gel carrier
  • Compartment
  • Membranes and optical surfaces: restricted contact
  • Carrier selection: particle, silicone and ESD requirements
  • Nonhermetic carriers: moisture and gas exposure

Materials and thickness

MaterialThickness per runUse and notes
Dicing tape and frameOn requestRetain die map Tape adhesion and release must suit the die.
Gel carrierOn requestImmobilize individual dies Contact surfaces must tolerate the gel.
Rigid compartment carrierOn requestSeparate individual dies Compartment size must limit die movement.
Full specifications
Substrates
Stable diced samples with accessible pickup and support surfaces.
Sample size
Routine dies: 2 × 2 mm to 25 × 25 mm; other sizes need suitable carriers.
Carrier
Tape frame, gel carrier or rigid compartment carrier selected for the device and next step.
Process temperature
Room-temperature handling; specify shipping temperature limits for sensitive devices.
Traceability
Include die map, orientation, identifiers and known-good-die list; electrical testing is separate.
  • Exposed membranes and optical surfaces restrict contact with gel, tape and pickup tools; identify permitted contact areas.
  • Particle sensitivity, silicone sensitivity and ESD requirements determine the carrier and handling method.
  • Nonhermetic carriers permit moisture and gas exposure; moisture-sensitive devices require suitable storage and shipping conditions.
03 / 04

Wire Bonding

Gold ball and aluminum wedge bonds connect die pads to carriers and packages.

Square pad
100 – 120 µm
Pad spacing
50 µm
Al wire Ø
17.78 – 50.8 µm
Au ball temp.
≈150 – 200 °C
  • Au ball
  • Al wedge
  • Gold wire
  • Al wire
  • Poor pad adhesion or support: pad-lift risk
  • Thin evaporated pads: inadequate mechanical strength risk
  • Gold-bearing parts excluded from clean furnaces

Materials and thickness

MaterialThickness per runUse and notes
Gold wire17.78–50.8 µmBall bond connection Wire diameter; pad finish must suit the bond geometry.
Aluminum wire17.78–50.8 µmWedge bond connection Wire diameter; aluminum wedge bonding operates at room temperature.
Full specifications
Substrates
Firmly attached dies with clean exposed pads, mechanical support and accessible wire paths.
Sample size
Dies to 25 × 25 mm; carriers to 50 × 50 mm; allow clamp and height clearance.
Materials
Gold ball-bond wire and aluminum wedge-bond wire; pad stack must suit the wire.
Pad geometry
100–120 µm square pads with 50 µm clear spacing; smaller pads reduce bonding clearance.
Pad thickness
Gold wedge-bond pads: 150 nm minimum, 250 nm preferred; specify the full pad stack.
Process temperature
Aluminum wedge bonding: room temperature; gold ball bonding: about 150–200 °C.
  • Poor pad adhesion or inadequate support can cause pad lift and device damage during bonding.
  • Thin evaporated metal can conduct electrically yet lack the thickness and adhesion needed for wire bonding.
  • Wire/pad metal combinations and operating temperature affect long-term bond reliability.
  • Gold-bearing parts are excluded from clean semiconductor furnace processing.
04 / 04

Die Attach

Die mounting on carriers for wire bonding and testing.

Die size
≤ 25 × 25 mm
Insul. cure
80 – 150 °C
Epoxies
2 types
Bondline
Package-specific
  • Insulating
  • Conductive
  • Epoxy
  • Ceramic
  • Metal
  • Full cure cycle: die, solder and carrier compatibility
  • Adhesive clearance from pads, cavities and moving structures
  • Formulation-specific conductivity, outgassing and reworkability

Materials and thickness

MaterialThickness per runUse and notes
Insulating epoxyOn requestInsulating attachment Cure and bondline must suit the package.
Conductive epoxyOn requestBackside electrical attachment Conductivity and cure must suit the contact stack.
Full specifications
Substrates
Flat-backed dies on ceramic, metal or compatible circuit carriers.
Sample size
Dies to 25 × 25 mm; larger dies require controlled bondlines and warpage.
Materials
Insulating or conductive epoxy selected for electrical, thermal and contamination requirements.
Process temperature
Insulating epoxy cures: 80–150 °C, depending on formulation and schedule.
Bondline
Thickness, placement tolerance and backside contact area depend on package geometry.
  • Dies, existing solder and carriers must tolerate the full cure cycle; lower-temperature cures can reduce warping.
  • Adhesive spread must stay clear of pads, cavities and moving structures.
  • Adhesive formulation limits conductivity, outgassing, reworkability and thermal performance; specify these requirements for the intended package.

Request a Quote

Tell us what you’re building.

Tell us what you want to make and what it needs to do. Send the substrate, film stack, layout, quantity, and requested timing for a quote.

  • Substrates and sizes
  • Film stack and feature sizes
  • Quantity and timeline