Glance Foundry
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Standard service

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Choose a clean for the next fabrication step and the layers that must survive it. Include exposed materials and contamination history with the request.

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  1. 01Solvent Cleaning
  2. 02Piranha Cleaning
  3. 03RCA SC-1 Cleaning
  4. 04RCA SC-2 Cleaning
  5. 05HF or Buffered Oxide Strip
01 / 05

Solvent Cleaning

Solvent cleaning for oils and soluble resist residues before coating or further cleaning.

Routine wafer
≤ 100 mm
Routine piece
≥ 5 × 5 mm
Temperature
Room temperature
Targets
Oils / organics
  • Si
  • Glass
  • Fused silica
  • Sapphire
  • Exposed solvent-sensitive polymers and adhesives excluded
  • Cured epoxy: difficult stripping
  • Ultrasonics: fragile structures and weak-film detachment risk
Full specifications
Substrates
Si, glass, fused silica, sapphire and solvent-compatible film stacks.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Process temperature
Room temperature; heated resist stripping is separate.
Removes
Oils and soluble organic films; removal depends on resist type and processing history.
Used before
Resist coating or subsequent inorganic-surface cleaning.
  • Solvent-sensitive plastics, adhesives and intentional polymer films cannot remain exposed during cleaning.
  • Fully cured epoxy resist is difficult to remove with conventional solvent strippers.
  • Weakly adhered films and fragile structures can detach during ultrasonic cleaning.
02 / 05

Piranha Cleaning

Oxidizing clean for residual organics on compatible inorganic surfaces.

Routine wafer
≤ 100 mm
Routine piece
≥ 5 × 5 mm
Bath temp.
85 – 100 °C
Target
Residual organics
  • Si
  • Silica
  • Sapphire
  • Exposed metals and adhesion stacks excluded
  • Intentional polymers and adhesives incompatible
  • Bath temperature rise during use
Full specifications
Substrates
Bare Si, silica and sapphire; metal-bearing stacks require a separate cleaning process.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Process temperature
85–100 °C typical; bath temperature can rise during use.
Removes
Residual organic contamination.
Used before
Pre-furnace cleaning or coating on inorganic surfaces.
  • Metal films and adhesion layers can be attacked by the cleaning bath.
  • Gold-bearing samples are excluded from clean semiconductor baths, even when the gold film tolerates the chemistry.
  • Intentional organic films, polymers and adhesives are incompatible; thick organic coatings require separate removal.
  • Exposed Al, Cu, Ni and metal adhesion stacks are excluded from this cleaning process.
03 / 05

RCA SC-1 Cleaning

Particle and light organic residue removal before clean thermal processing.

Routine wafer
≤ 100 mm
Routine piece
≥ 5 × 5 mm
Temperature
60 – 80 °C
Next clean
SC-2
  • Si
  • Oxide
  • Nitride
  • Exposed metals, polymers and adhesives excluded
  • Prior resist removal required
  • Oxide-free interfaces: additional stripping step
Full specifications
Substrates
Bare Si and compatible silicon oxide/nitride surfaces.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Process temperature
60–80 °C.
Removes
Particles and light organic contamination.
Used before
SC-2 cleaning and clean furnace processing.
  • Exposed metals, including Al, Cu, Au and adhesion layers, are excluded; compound semiconductors, polymers and adhesives need separate cleaning.
  • Intentional resist must be removed before SC-1 cleaning.
  • Oxide-free interfaces require an additional oxide-removal step.
04 / 05

RCA SC-2 Cleaning

Metal-ion contamination removal before clean thermal processing.

Routine wafer
≤ 100 mm
Routine piece
≥ 5 × 5 mm
Temperature
70 – 90 °C
Target
Metal ions
  • Si
  • Oxide
  • Nitride
  • Exposed metals and adhesion stacks excluded
  • Oxide-free interfaces: separate stripping step
  • Glass, polymers and compound semiconductors excluded
Full specifications
Substrates
Bare Si and compatible silicon oxide/nitride surfaces.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Process temperature
70–90 °C.
Removes
Metal ions on the wafer surface.
Used before
Clean furnace processing after particle and organic removal.
  • Exposed Al, Cu, Ni, Au and metal adhesion stacks are excluded from the clean bath.
  • Silicon retains a thin surface oxide; oxide-free interfaces require a separate removal step.
  • Polymers, adhesives, compound semiconductors and glass are outside the silicon cleaning process.
05 / 05

HF or Buffered Oxide Strip

Silicon oxide removal before contact formation and processes requiring exposed silicon.

Routine wafer
≤ 100 mm
Routine piece
≥ 5 × 5 mm
Temperature
Room temperature
Target
Silicon oxide
  • Si
  • Glass and fused silica: substrate attack
  • Ti and deposited alumina: removal risk
  • Retained oxide regions: protection required
Full specifications
Substrates
Si with oxide intended for removal; list all exposed films.
Sample size
5 × 5 mm pieces to 100 mm wafers; smaller pieces and 150 mm wafers need compatible holders.
Process temperature
Room-temperature dip.
Removes
Silicon oxide.
Used before
Metallization and processes requiring an oxide-free interface.
  • Glass and fused silica are attacked; these substrates are excluded unless their etching is intentional.
  • Exposed Ti and deposited alumina can be removed; nitride survival depends on film composition and exposure.
  • Exposed Al and incompatible metal adhesion stacks are excluded.
  • Intentional oxide needs protection; specify retained oxide regions and the next processing step.

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