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Etching

Transfer a mask into a substrate or remove selected films. Submit the full layer stack, target depth, critical dimensions and the layer that must remain.

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  1. 01Plasma Etcher/Asher
  2. 02Reactive Ion Etching: Fluorine and Oxygen
  3. 03ICP-RIE with Fluorine Chemistry
  4. 04ICP-RIE with Chlorine Chemistry
  5. 05Wet Etching
01/ 05

Plasma Etcher/Asher

Parallel-plate barrel plasma etching, ashing, descum and surface activation, with a chamber sized for large batches.

Wafer Sizes
Up to 8″
Min Feature Size
Process-dependent

Etch Materials

  • Photoresist
  • Organic films
  • Si
  • SiO₂
  • Si₃N₄

Process Gases

Targets and selectivity depend on the gas mixture, mask, exposed layers and recipe.

GasEtching Targets / RoleSelectivity
O₂Photoresist; organic filmsAlso removes organic masks; inorganic layers need compatibility review.
CF₄ / O₂Si-based films; mixed organic/inorganic residueTarget and mask loss depend on the blend; not an oxide stop.
Full specifications
Wafer sizes
Up to 8″
Configuration
Parallel-plate barrel etcher/asher.
Plasma source
13.56 MHz RF.
Chamber
22 cm diameter × 37 cm long.
Batch format
Large batches; loading depends on part dimensions and holders.
O₂ clean (descum)
Oxygen plasma cleaning and descum for organic residue removal and surface activation.
O₂ & CF₄ etch
Oxygen and CF₄ plasma etching.
DS 180 photoresist strip
DS 180 photoresist stripping.
  • Oxygen plasma oxidizes surfaces and removes organic films; oxidation-sensitive metals and functional organic layers need protection.
  • Wafer size
02 / 05

RIE

Reactive ion etching (RIE) of silicon-based films and organic masks for wafer cleaning/descum, well defined etch profiles with near-vertical sidewalls, and ....

Wafer Sizes
Up to 12″
Min Feature Size
Process-dependent

Etch Materials

  • Si
  • SiO₂
  • Si₃N₄
  • Photoresist

Process Gases

Targets and selectivity depend on the gas mixture, mask, exposed layers and recipe.

GasEtching Targets / RoleSelectivity
ArIon-assisted etching; physical sputteringLow chemical selectivity; masks can erode.
CF₄Si, SiO₂, Si₃N₄Limited SiO₂-to-Si selectivity without recipe tuning.
SF₆Si; Si₃N₄ in mixturesCan favor Si over SiO₂; blend and bias dependent.
CHF₃SiO₂, Si₃N₄Can favor SiO₂ over Si through fluorocarbon passivation.
O₂Photoresist; organic filmsAlso removes organic masks; inorganic layers need compatibility review.
Full specifications
Materials
Si, SiO2 and silicon nitride with fluorine chemistry; organic resist with oxygen.
Sample size
Up to 12″ wafers.
Atmosphere
Ar, CF₄, SF₆, CHF₃, O₂.
Process temperature
Chuck: 20–60 °C; sample temperature can be higher.
Mask options
Photoresist or dielectric hard masks; thickness depends on etch depth and selectivity.
Profile
Directional profiles; slope, undercut and stop-layer loss depend on the film stack and pattern.
  • Oxygen etching also consumes organic masks; use a compatible hard mask when the target is organic.
  • Gold-bearing stacks require segregated processing; exposed materials must match chamber contamination rules.
  • Etch depth and aspect ratio limit sidewall control; through-wafer silicon etching is outside this process.
03 / 05

ICP-RIE with Fluorine Chemistry

Patterned silicon, oxide and nitride etching with controlled sidewall profiles.

Wafer Sizes
4″
Min Feature Size
Process-dependent

Etch Materials

  • Si
  • SiO₂
  • Si₃N₄
  • Dielectrics

Process Gases

Targets and selectivity depend on the gas mixture, mask, exposed layers and recipe.

GasEtching Targets / RoleSelectivity
CF₄Si, SiO₂, Si₃N₄Limited SiO₂-to-Si selectivity without recipe tuning.
CHF₃SiO₂, Si₃N₄Can favor SiO₂ over Si through fluorocarbon passivation.
SF₆Si; Si₃N₄ in mixturesCan favor Si over SiO₂; blend and bias dependent.
CH₄Carbon-containing recipe additiveMixture-dependent; no standalone selectivity.
H₂Fluorine-scavenging additiveChanges dielectric selectivity through the gas balance.
O₂Photoresist; organic filmsAlso removes organic masks; inorganic layers need compatibility review.
ArIon-assisted etching; physical sputteringLow chemical selectivity; masks can erode.
N₂Dilution and surface-chemistry additiveMixture-dependent; no standalone selectivity.
HeInert plasma diluentNo intrinsic chemical selectivity.
Full specifications
Materials
Si, SiO₂, Si₃N₄ and compatible dielectrics.
Sample size
4″ wafers.
Atmosphere
CF₄, CHF₃, SF₆, CH₄, H₂, O₂, Ar, N₂, He.
Process temperature
Chuck: 10–60 °C; sample heating depends on carrier contact.
Mask options
Resist or compatible hard mask; oxide/alumina for Si, etch-resistant masks for oxide.
Profile
Near-vertical or lateral profiles; specify depth, width, pitch and open-area fraction.
  • Pattern density and exposed area affect etch depth and profile across the layout.
  • Poor thermal contact to a carrier can overheat pieces and damage resist.
  • Deep cyclic and cryogenic silicon etching require separate processes.
  • Exposed metals, especially gold, require segregated processing.
04 / 05

ICP-RIE with Chlorine Chemistry

Directional etching of compound semiconductors and compatible metal films.

Wafer Sizes
4″
Min Feature Size
Process-dependent

Etch Materials

  • AlN
  • Al
  • Diamond
  • III–V semiconductors

Process Gases

Targets and selectivity depend on the gas mixture, mask, exposed layers and recipe.

GasEtching Targets / RoleSelectivity
Cl₂Al, AlN; selected III–V materialsMaterial-, mask- and mixture-dependent.
BCl₃Oxide breakthrough; Al/AlN and III–V mixturesOxide removal can also attack exposed oxide masks or stops.
HBrSi; selected III–V mixturesCan favor Si over SiO₂; III–V stacks need recipe qualification.
SF₆Fluorine component in III–V mixturesGaAs/AlGaAs selectivity is possible with BCl₃; recipe-dependent.
CH₄Selected III–V materials with H₂Combined CH₄/H₂ chemistry; material- and mask-dependent.
H₂Companion gas for CH₄-based III–V etchingSelectivity belongs to the complete mixture.
O₂Diamond; photoresist and organic filmsOrganic masks also etch; compatible hard masks may be needed.
ArIon-assisted etching; physical sputteringLow chemical selectivity; masks can erode.
N₂Dilution and surface-chemistry additiveMixture-dependent; no standalone selectivity.
HeInert plasma diluentNo intrinsic chemical selectivity.
Full specifications
Materials
AlN, Al, diamond and compatible III–V materials; chemistry and masks are selected for each material.
Sample size
4″ wafers.
Atmosphere
Cl₂, BCl₃, HBr, SF₆, CH₄, H₂, O₂, Ar, N₂, He.
Process temperature
Near ambient to about 200 °C, depending on material.
Mask options
Resist for cooler steps; oxide/nitride hard masks for hotter or deeper etches.
Profile
Directional profiles; sidewall angle, surface damage and stop-layer loss depend on material and recipe.
  • GaN buffers, contacts and underlying substrates have different etch compatibility requirements.
  • High-temperature etching requires a heat-compatible mask, mounting method and complete film stack.
  • Gold and other contaminating metals are excluded from shared clean processing.
  • Post-etch residues and surface damage can affect electrical behavior; specify the required clean and device sensitivity.
05 / 05

Wet Etching

Selective removal of silicon, dielectric and metal films with chemistry matched to the layer stack.

Wafer Sizes
On request
Min Feature Size
Process-dependent

Etch Materials

  • Si
  • SiO₂
  • Si₃N₄
  • Al
  • Cr
  • Au
  • Ta
  • III–V materials

Etchants

Available stock chemicals and formulated etchants. Acids may be mixture components; selectivity depends on the complete chemistry and exposed layers.

EtchantEtching Targets / RoleSelectivity
AcOHComponent of Si and Al etch mixturesMixture-dependent.
Citric AcidIII–V etch mixturesComposition-dependent.
HCl (38%)Native oxides; III–V etch mixturesMaterial- and mixture-dependent.
H₂O₂ (30%)Oxidizer in etch and cleaning mixturesSet by the complete mixture.
HF (48%)SiO₂Favors oxide over Si; attacks glass and Ti.
Lactic AcidEtch-mixture componentMixture-dependent.
H₂SO₄Etch and organic-removal mixturesMixture-dependent; resist is vulnerable.
H₃PO₄Si₃N₄ in heated processesFavors nitride over SiO₂; bath-dependent.
HNO₃Oxidizer in Si and metal etch mixturesMixture-dependent.
BOE 7:1 + SurfactantSiO₂Favors oxide over Si; check exposed metals.
BOE 10:1 + SurfactantSiO₂Favors oxide over Si; check exposed metals.
Al Etchant DAlAl over SiO₂; check other exposed films.
Cr Etchant 1020CrCompatible with Au/Ti; attacks Al, Ni and Cu.
Au Etchant TFAAuCompatible with Cr/Ti; attacks Ni, Cu and Al.
Ta EtchantTaFormulation-dependent; check exposed layers.
Full specifications
Materials
Si, SiO₂, Si₃N₄, Al, Cr, Au, Ta and selected III–V materials; chemistry is selected for the full layer stack.
Sample size
Wafer and piece sizes confirmed on request.
Profile
Lateral undercut depends on the material, chemistry and etch depth.
Mask options
Resist or a compatible hard mask, selected for the chemistry and temperature.
  • Masks must protect all sample faces and layers that need to remain.
  • Selectivity depends on the complete mixture, film composition and bath conditions.

Request a Quote

Tell us what you’re building.

Tell us what you want to make and what it needs to do. Send the substrate, film stack, layout, quantity, and requested timing for a quote.

  • Substrates and sizes
  • Film stack and feature sizes
  • Quantity and timeline