Glance Foundry
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Standard service

Annealing

Apply a specified thermal treatment or grow thermal oxide on silicon. Submit the full material stack, prior processing and maximum allowed temperature and time.

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  1. 01Tube Furnace Annealing
  2. 02Thermal Oxidation of Silicon
  3. 03Rapid Thermal Annealing
01 / 03

Tube Furnace Annealing

Sustained thermal treatments for silicon and compatible film stacks.

Wafer size
Up to 4"
Clean anneal
800 – 1100 °C
Al forming gas
≈400 – 450 °C
Atmospheres
4 options
  • N₂
  • Ar
  • Forming gas
  • O₂
  • Metal-bearing samples: separate tubes
  • Thermal budget limits: polymers, solder and contacts
  • High-temperature GaN and SiC activation excluded
Full specifications
Substrates
Clean Si and silicon dielectrics; fused silica, sapphire and metal-bearing samples use compatible separate processing flows.
Sample size
Pieces to 100 mm wafers; 150 mm requires compatible tube and carrier dimensions.
Process temperature
Clean anneals: 800–1100 °C; Al forming-gas treatments: about 400–450 °C.
Atmosphere
N2, Ar, forming gas or O2; atmosphere depends on tube and material compatibility.
Thermal budget
Al forming-gas anneals: about 400–450 °C; higher temperatures increase hillock risk.
CMOS compatibility
Clean tubes exclude exposed Au, Cu, Ag and Al; list all prior metal exposure.
  • Metal-bearing samples require separate tubes from clean semiconductor anneals.
  • Borosilicate glass has grade-specific thermal limits and cannot tolerate typical high-temperature silicon cycles.
  • Polymers, adhesives, solder and multilayer contacts limit allowable temperature and dwell time.
  • High-temperature GaN and SiC activation require dedicated atmospheres and surface protection outside this process.
02 / 03

Thermal Oxidation of Silicon

Thermal oxide growth on exposed silicon for thin and thick insulation.

Wafer size
Up to 4"
Standard temp.
900 – 1100 °C
Dry oxide
10 – 150 nm
Wet oxide
0.1 – 2 µm
  • Si
  • SiO₂
  • Dry O₂
  • Water vapor
  • Silicon loss: ≈0.44× grown oxide thickness
  • Metals, polymers and incompatible bonded stacks excluded
  • Pre-furnace cleaning and complete material history required

Materials and thickness

MaterialThickness per runUse and notes
Thermal SiO₂, dry growth10–150 nmThin insulating oxide Thickness and film stress must fit the device thermal budget.
Thermal SiO₂, wet growth0.1–2 µmThicker insulating oxide Thickness and film stress must fit the device thermal budget.
Full specifications
Substrates
Clean Si and silicon structures; exposed silicon is required.
Sample size
Pieces to 100 mm wafers; 150 mm requires compatible tube and carrier dimensions.
Process temperature
900–1100 °C standard; some oxidation recipes extend across 900–1150 °C.
Atmosphere
Dry O2 or water vapor with inert purge.
Thickness range
Dry: 10–150 nm; wet: 0.1–2 µm. Recipe-dependent ranges: 5–150/5–300 nm dry; 2/3 µm wet maxima.
CMOS compatibility
Clean semiconductor processing; pre-furnace cleaning and complete material history required.
  • Silicon dimensional loss is approximately 0.44 times the grown oxide thickness; allow for this in thin device layers.
  • Metal films, polymers and incompatible bonded stacks are excluded from clean oxidation.
  • Gate dielectrics require suitable breakdown strength, interface quality and thickness uniformity; specify electrical requirements alongside thickness.
03 / 03

Rapid Thermal Annealing

Short thermal cycles for contact and film treatments.

Wafer size
Up to 4"
Instrument max
1200 °C
Cycle time
< 5 min
Al forming gas
≈400 – 450 °C
  • N₂
  • Ar
  • Forming gas
  • Sample thermal limit set by complete stack
  • Temperature measurement limitations on transparent substrates
  • Prior gold exposure: segregated processing
Full specifications
Substrates
Si and compatible film stacks; glass, sapphire and compound semiconductors require suitable carriers and temperature measurement.
Sample size
Pieces to 100 mm wafers; 150 mm wafers exceed standard handling.
Process temperature
Instrument range: room temperature to 1200 °C; usable sample temperature depends on stack and temperature measurement.
Atmosphere
N2, Ar or forming gas; O2 requires an oxygen-compatible process.
Thermal budget
Short cycles below 5 minutes; specify peak temperature and dwell together.
CMOS compatibility
Clean and metal-bearing samples use separate flows; Au, Ag and Cu are excluded from clean processing.
  • Metals and polymers limit peak sample temperature even during short cycles.
  • Al contacts typically use forming-gas cycles around 400–450 °C; the complete stack sets the allowable temperature.
  • Transparent substrates, small pieces and changing surface coatings complicate sample-temperature measurement.
  • Prior gold and other contaminating metal exposure requires segregated processing; include the complete material history.

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Tell us what you’re building.

Tell us what you want to make and what it needs to do. Send the substrate, film stack, layout, quantity, and requested timing for a quote.

  • Substrates and sizes
  • Film stack and feature sizes
  • Quantity and timeline