Glance Foundry
Back to the cleanroom

Standard service

Design & Mask

Prepare a layout for fabrication, order a chrome photomask, or write nanoscale patterns directly into resist.

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  1. 01Layout Intake and Preparation
  2. 02Chrome Photomask Writing
  3. 03Electron-Beam Direct Writing
01 / 03

Layout Intake and Preparation

Layout preparation for fabrication, layer mapping, alignment marks and process-compatible features.

Contact rules
2 µm
Maskless line size
0.6 µm
Preferred file
GDSII
Conversions
OASIS / DXF / CIF
  • GDSII
  • OASIS
  • DXF
  • CIF
  • PDF
  • Complete layer stack and material history required
  • Electrical design and simulation: separate services
Full specifications
Files
GDSII preferred; OASIS/DXF/CIF conversion. Include units, top cell, layer/datatype map and dimensioned PDF.
Design rules
Contact exposure: about 2 µm. Maskless writing: lines down to 0.6 µm; spacing and transfer requirements are checked separately.
Nanoscale layout
Include critical widths, gaps, exposed area and overlay tolerance.
Alignment
Include global/local marks, front/back orientation and a coordinate map.
Dicing lanes
Continuous streets with clearance for cutting loss and edge chipping.
Process temperature
Include the maximum sample temperature for subsequent processing.
  • Incomplete layer stacks and material histories prevent reliable selection of masks and pattern-transfer steps.
  • Manufacturability checks cover layout and fabrication constraints; electrical design and device simulation are separate services.
02 / 03

Chrome Photomask Writing

Reusable chrome photomasks for repeated optical exposures.

Square plates
100 / 125 mm
Min feature
≈1 µm
Blank thick.
2286 – 6350 µm
Resist bake
≤ 120 °C
  • Cr
  • Glass
  • Fused silica
  • Clear-field
  • Dark-field
  • Plate dimensions and thickness: holder fit required
  • Mask defects repeated in every exposure
  • Wafer resolution limited by exposure method and resist

Materials and thickness

MaterialThickness per runUse and notes
Chrome on glass2286–6350 µmGeneral optical mask Blank thickness; select glass grade and holder-compatible dimensions.
Chrome on fused silica2286–6350 µmAlternative optical mask Blank thickness; select glass grade and holder-compatible dimensions.
Full specifications
Materials
Chrome on glass or fused silica; specify the optical grade.
Sample size
100 × 100 mm and 125 × 125 mm plates; larger sizes require compatible holders.
Minimum feature
About 1 µm, depending on line and gap geometry.
Tone and mirroring
Specify clear-field/dark-field tone and viewing side: chrome or glass. Include labelled orientation.
Process temperature
Writing near room temperature; resist bakes up to 120 °C.
  • Wafer resolution depends on the exposure method and resist, as well as the mask feature size.
  • Plate dimensions and thickness must fit both the writer and exposure holder.
  • Mask defects repeat in subsequent exposures; critical features require inspection before reuse.
03 / 03

Electron-Beam Direct Writing

Direct electron-beam patterning for nanoelectronics, photonics and quantum devices.

Beam energy
100 kV
Min feature size
< 8 nm
Overlay accuracy
< 5 nm
Max beam current
350 nA
  • Si
  • Glass
  • Fused silica
  • Sapphire
  • Acrylic
  • Bilayer
  • Proximity-effect correction
  • Automatic beam and alignment calibration
  • Final dimensions depend on resist and pattern transfer

Materials and thickness

MaterialThickness per runUse and notes
Positive acrylic resistOn requestGeneral nanoscale mask Thickness depends on feature size and transfer depth.
Acrylic bilayerOn requestLift-off mask Undercut must accommodate the metal stack.
Negative silsesquioxane resistOn requestFine etch mask Removal chemistry must preserve underlying films.
Full specifications
Beam energy
100 kV primary operation; 50 kV calibration available.
Minimum feature
Below 8 nm with suitable resist and pattern geometry.
Overlay accuracy
Below 5 nm with suitable alignment marks.
Beam current
Up to 350 nA; current is selected for resolution and write time.
Samples
Wafers, photomasks and small pieces; sample dimensions are checked against the available holders.
Pattern preparation
Proximity-effect correction with automatic beam and alignment calibration.
  • Insulating samples require charge control; the resist and mounting are selected for the substrate.
  • Minimum feature size and overlay depend on the layout and resist process; etching or lift-off sets the final device dimensions.

Request a Quote

Tell us what you’re building.

Tell us what you want to make and what it needs to do. Send the substrate, film stack, layout, quantity, and requested timing for a quote.

  • Substrates and sizes
  • Film stack and feature sizes
  • Quantity and timeline